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TPCA8122L1Q(O

Part No TPCA8122L1Q(O
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (T - Z)
Description Power MOSFET (P-ch single)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 962267-TPCA8122L1Q(O
Categories OEM Parts(T-Z)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TPCA8122L1Q(O CAD Model

Description

The TPCA8122L1Q(O is a P-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for load switch and power management applications in automotive and industrial systems. This MOSFET features low on-resistance and excellent switching characteristics, contributing to high efficiency and reliable performance.

Applications:

  • Automotive Load Switches
  • Power Management Circuits
  • Reverse Battery Protection
  • DC-DC Converters
  • Solid State Relays

Features:

  • P-Channel MOSFET: Suitable for high-side switching applications
  • Low On-Resistance: Reduces power losses and improves efficiency
  • Fast Switching Speed: Enables high-frequency operation
  • AEC-Q101 Qualified: Suitable for automotive applications
  • RoHS Compliant: Environmentally friendly
  • Small Surface Mount Package: Allows for efficient board layout

Benefits:

  • High Efficiency: Minimizes power dissipation and reduces heat generation
  • Reliable Performance: Ensures stable operation in demanding automotive environments
  • Fast Switching: Enables efficient power conversion
  • Automotive Grade: Meets stringent automotive quality standards
  • Compact Design: Saves valuable board space

Additional Details:

The TPCA8122L1Q(O) features a low gate charge, contributing to its fast switching speed and reduced driving requirements. The device is designed for easy parallel operation, allowing for increased power handling capability. Its small surface mount package facilitates efficient board layout and reduces overall system size. The MOSFET's AEC-Q101 qualification ensures its suitability for automotive applications, where reliability and robustness are critical. The on-resistance is specified at a given gate-source voltage and drain current. The gate threshold voltage is carefully controlled to ensure consistent performance across different devices. The device is specifically designed for automotive applications requiring P-channel MOSFETs.

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