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Same model may have multiple batches, images only for reference.
TPCA8128,LQ(CM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCA8128,LQ(CM

Part No TPCA8128,LQ(CM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 34A 8SOP-ADV
Datasheet
TPCA8128,LQ(CM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 500μA
Gate Charge (Qg) (Maximum) @ Vgs 115nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4800pF @ 10V
Vgs (Maximum) +20V, -25V
Power Dissipation (Maximum) 1.6W (Ta), 45W (Tc)
Rds On (Maximum) @ Id, Vgs 4.8 mOhm @ 17A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SOP Advance (5x5)
Package 8-PowerVDFN
Win Source Part Number 797820-TPCA8128,LQ(CM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPCA8128,LQ(CM CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET in the U-MOSVI series is a high-performance component designed for use in discrete semiconductor products. Toshiba Semiconductor and Storage

  • Continuous Drain Current (Ta): 34A
  • Power Dissipation (Maximum) (Ta): 1.6W
  • Package: 8-PowerVDFN
  • Mounting: SMD
  • Channel Type: P
  • Drain-Source Voltage: 30V
  • Gate Charge (Qg): 115nC @ 10V
  • Input Capacitance (Ciss): 4800pF @ 10V
  • Rds On (Maximum): 4.8 mOhm @ 17A, 10V
  • Applications: Discrete Semiconductor Products
  • Packaging: Reel

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