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Same model may have multiple batches, images only for reference.
TPCC8066-H,LQ(S
Same model may have multiple batches, images only for reference.

TPCC8066-H,LQ(S

Part No TPCC8066-H,LQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8TSON-ADV
Datasheet
TPCC8066-H,LQ(S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 1100pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 17W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON Advance (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 1111134-TPCC8066-H,LQ(S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCC8066-H,LQ(S CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a powerful N-Channel device that is designed to handle high power dissipation up to 700mW (Ta), 17W (Tc).

  • Manufacturer: Toshiba Semiconductor and Storage
  • MOSFET Type: N-Channel
  • Power Dissipation: 700mW (Ta), 17W (Tc)
  • Mounting: SMD (SMT)
  • Package: 8-TSON Advance (3.3x3.3)
  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 11A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 100μA
  • Max Gate Charge: 15nC @ 10V
  • Max Rds On @ Id, Vgs: 15 mOhm @ 5.5A, 10V
  • Popularity: Medium

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