This electronic component is also manufactured by Toshiba Semiconductor and Storage.

• Packaging: Tape & reel (TR)
• Capacitance: 3.24 nF
• Drain to Source Voltage (Vdss): 30V
• Input Capacitance: 3.24 nF
• Number of Pins: 8
• Rise Time: 8 ns
• Fall Time: 110 ns
• Category: Transistors - FETs, MOSFETs - RF
• Popularity: Low
• Threat of Fake Products: 50%
• Supply and Demand Status: Shortage
• Operating Temperature Range: -55°C to 150°C
• Maximum Power Dissipation: 30W
• Continuous Drain Current (ID): 23A
• Gate to Source Voltage (Vgs): 20V
• Rds On Max: 7.8 mΩ
• RoHS Compliant: Yes
• Radiation Hardened: No