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Same model may have multiple batches, images only for reference.
TPCF8104(TE85L,F,M
Same model may have multiple batches, images only for reference.

TPCF8104(TE85L,F,M

Part No TPCF8104(TE85L,F,M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 30V 6A 8-PIN Vs T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package SMD/SMT
Continuous Drain Current (ID) 6 A
Drain to Source Breakdown Voltage -30 V
Drain to Source Resistance 28 mΩ
Drain to Source Voltage (Vdss) 30 V
Fall Time 22 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 1.76 nF
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Power Dissipation 2.5 W
Radiation Hardening No
Rds On Max 28 mΩ
Rise Time 2.8 ns
RoHS Compliant
Win Source Part Number 1132173-TPCF8104(TE85L,F,M
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPCF8104(TE85L,F,M CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance electronic component designed for various applications.

  • Drain-to-Source Voltage: 30 V
  • Input Capacitance: 1.76 nF
  • Power Dissipation: 2.5 W
  • Rise Time: 2.8 ns
  • Fall Time: 22 ns
  • Number of Pins: 8
  • Mounting Type: Surface Mountable
  • Drain-to-Source Breakdown Voltage: -30 V
  • Drain-to-Source Resistance: 28 mΩ
  • Gate-to-Source Voltage: 20 V
  • Rds On Max: 28 mΩ
  • RoHS Compliant: Yes
  • Operating Temperature: -55 °C to 150 °C
  • Continuous Drain Current: 6 A
  • Application: Transistors, FETs, and MOSFETs - RF

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