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TPH1R712MD

Part No TPH1R712MD
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference case SOP8
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 759793-TPH1R712MD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPH1R712MD CAD Model

Description

The TPH1R712MD is an N-channel power MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power switching applications, offering low on-resistance and fast switching speeds.

Applications:

  • DC-DC converters: Used in voltage regulation and power conversion circuits.
  • Motor control circuits: Used for efficient motor driving applications.
  • Power management in automotive systems: Suitable for automotive applications requiring robust and efficient power management.
  • Synchronous rectification: Improves efficiency in power supplies by replacing diodes with MOSFETs.
  • Load switching: Controls power supply to various loads in electronic devices.

Features:

  • N-Channel MOSFET: Provides high current capability and low on-resistance.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, enhancing efficiency.
  • Fast Switching Speed: Enables quick transitions, important for high-frequency applications.
  • Low Gate Charge (Qg): Reduces the drive power requirements.
  • AEC-Q101 Qualified: Suitable for automotive applications due to its high reliability.

Benefits:

  • Improved Efficiency: Low RDS(on) reduces power dissipation, leading to energy savings.
  • Simplified Circuit Design: N-channel configuration simplifies drive circuitry.
  • Enhanced Thermal Performance: Efficient heat dissipation due to optimized design.
  • Reliable Operation: Designed for robust performance in demanding environments, including automotive applications.
  • Compact Design: Surface mount package allows for smaller and denser layouts.

Additional Details:

The TPH1R712MD features a low gate threshold voltage, allowing it to be driven by low voltage logic signals. Its maximum drain-source voltage (VDS) and continuous drain current (ID) vary depending on the specific datasheet, but it is engineered to handle substantial power levels efficiently. It comes in a TO-252 or similar package. The device is designed to operate within a wide temperature range, ensuring consistent performance across various operating conditions. Always refer to the manufacturer's datasheet for detailed electrical characteristics, thermal specifications, and application guidelines. This MOSFET is often used in automotive power supplies, motor drivers, and other high-reliability applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9864 $59.1840
145+ $0.8094 $117.3630
225+ $0.7842 $176.4450
305+ $0.7588 $231.4340
395+ $0.7336 $289.7720
530+ $0.6577 $348.5810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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