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TPH5200FNH,L1Q

Part No TPH5200FNH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 26A SOP8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 2200pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 78W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 13A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1087761-TPH5200FNH,L1Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPH5200FNH,L1Q CAD Model

Description

The TPH5200FNH,L1Q is a Toshiba Semiconductor and Storage product, specifically an N-channel power MOSFET. It's designed for high-efficiency switching applications and features low on-resistance and fast switching speeds. It is commonly found in DC-DC converters, load switches, and motor control circuits within automotive and industrial applications.

Applications

  • Automotive DC-DC Converters: Voltage regulation for various automotive electronic systems.
  • Load Switches: Controlling power distribution in automotive and industrial applications.
  • Motor Control: Driving small motors in automotive and industrial equipment.
  • Power Management Circuits: Efficient switching for power management in a variety of applications.
  • Lighting Control: LED driving in automotive and industrial lighting systems.

Features

  • N-Channel MOSFET: Efficient switching for positive gate voltages.
  • Low On-Resistance (Rds(on)): Minimizes power loss during conduction, improving efficiency.
  • Fast Switching Speed: Enables high-frequency operation and reduces switching losses.
  • AEC-Q101 Qualified: Suitable for automotive applications due to its robust design and reliability.
  • High Drain Current (Id): Capable of handling high current loads.
  • SOP-8 Package: Surface mount package for automated assembly.

Benefits

  • High Efficiency: Low on-resistance and fast switching speed lead to higher overall system efficiency.
  • Automotive Grade Reliability: AEC-Q101 qualification ensures reliable operation in demanding automotive environments.
  • Reduced Power Dissipation: Low on-resistance minimizes heat generation.
  • Simplified Design: Surface mount package facilitates easier PCB layout and assembly.
  • Compact Footprint: SOP-8 package allows for high-density designs.

Additional Details

The TPH5200FNH,L1Q typically has a drain-source voltage (Vds) rating of 60V. The on-resistance (Rds(on)) is typically a few milliohms, contributing to the device's efficiency. It is RoHS compliant. For specific electrical characteristics, thermal resistance, and safe operating area information, refer to the official datasheet provided by Toshiba Semiconductor and Storage.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9090 $57.2700
65+ $1.5664 $101.8160
100+ $1.5175 $151.7500
140+ $1.4685 $205.5900
180+ $1.4196 $255.5280
240+ $1.2727 $305.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,980 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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