The Toshiba Semiconductor and Storage N-Channel MOSFET is a high-performance electronic component designed for use in various applications.

• GPTDescription: The TPH7R506NH,L1Q MOSFET features a drain-source breakdown voltage of 60V, continuous drain current of 22A @ 25°C, and Rds On of 7.5 mOhm @ 11A, 10V.
• GPTDescription: It comes in an 8-SOP Advance (5x5) package/case and has a maximum power dissipation of 1.6W @ Ta and 45W @ Tc.
• GPTDescription: The MOSFET has a gate-source threshold voltage of 4V @ 300μA, maximum gate charge of 31nC @ 10V, and maximum input capacitance of 2320pF @ 30V.
• GPTDescription: The MOSFET is ideal for use in MOSFET applications, and it is active.
• GPTDescription: Its temperature range of operation is 150°C (TJ).
• GPTDescription: The MOSFET is an excellent choice for your electronic designs.