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TPN3300ANH,LQ

Part No TPN3300ANH,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.4A 8TSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 880pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 4.7A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON Advance (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 122965-TPN3300ANH,LQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPN3300ANH,LQ CAD Model

Description

The Toshiba Semiconductor and Storage 122965-TPN3300ANH,LQ is an N-channel MOSFET technology electronic component that can be used in a variety of applications.

  • GPTDescription: This component is part of the 8-TSON Advance (3.3x3.3) package and has a medium popularity rating.
  • GPTDescription: The supply and demand status of this component is balanced.
  • GPTDescription: With a maximum drain-source breakdown voltage of 100V and a continuous drain current of 9.4A @ 25°C, the Toshiba Semiconductor and Storage 122965-TPN3300ANH,LQ is a reliable and high-quality component that can be used in a variety of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7792 $60.4672
38+ $3.1012 $117.8456
58+ $3.0042 $174.2436
80+ $2.9071 $232.5680
103+ $2.8101 $289.4403
138+ $2.5202 $347.7876
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,400 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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