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TPN4R203NC,L1Q

Part No TPN4R203NC,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 30V 23A 8TSON-ADV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.3V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1370pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 700mW (Ta), 22W (Tc)
Rds On (Maximum) @ Id, Vgs 4.2 mOhm @ 11.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-TSON Advance (3.3x3.3)
Package 8-PowerVDFN
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 735418-TPN4R203NC,L1Q
Popularity Medium
Supply and Demand Status Balance
Family Name TPN4R203NC
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian TPN4R203NC,L1Q CAD Model

Description

The Toshiba Semiconductor and Storage TPN4R203NC,L1Q is a MOSFET component from the U-MOSVIII series by Toshiba Semiconductor and Storage.

  • Current Continuous Drain: 23A @ 25°C
  • Maximum Power Dissipation: 700mW (Ta), 22W (Tc)
  • Package: 8-PowerVDFN
  • Mounting: SMD
  • Technology: MOSFET
  • Channel Type: N
  • Gate Charge (Qg) maximum @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) maximum @ Vds: 1370pF @ 15V
  • ROHS Compliant: Yes
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6083 $51.7055
205+ $0.4992 $102.3360
315+ $0.4836 $152.3340
430+ $0.4680 $201.2400
555+ $0.4524 $251.0820
740+ $0.4056 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,866 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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