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Same model may have multiple batches, images only for reference.
ULN2803AP Real Image
Same model may have multiple batches, images only for reference.

ULN2803AP

Part No ULN2803AP
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 8NPN DARL 50V 0.5A 18DIP
Datasheet
ULN2803AP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity 8 NPN Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min) 1000 @ 350mA, 2V
Maximum Power Dissipation 1.47W
Temperature Range - Operating -40°C to 85°C (TA)
Mounting Through Hole
Case / Package 18-DIP
Win Source Part Number 043442-ULN2803AP
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Ultra Librarian 3D Model Ultra Librarian ULN2803AP CAD Model

Description

The Toshiba Semiconductor and Storage ULN2803AP is a high-performance NPN Darlington transistor array that is designed for use in power management, consumer electronics, portable devices, and industrial applications.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 500mA
  • Typical Gain: 1000 @ 350mA and 2V
  • Package: 18-DIP
  • Operating Temperature Range: -40°C to 85°C
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
21+ $2.8575 $60.0075
50+ $2.3447 $117.2350
77+ $2.2719 $174.9363
106+ $2.1980 $232.9880
136+ $2.1252 $289.0272
182+ $1.9058 $346.8556
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Availability: 1,910 pieces
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