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UJ3C120150K3S

Part No UJ3C120150K3S
Manufacturer UnitedSiC
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr UnitedSiC
Package Tube
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 12V
Vgs(th) (Max) @ Id 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 15 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 738 pF @ 100 V
Power Dissipation (Max) 166.7W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number UJ3C120150
Other Names 2312-UJ3C120150K3S
Standard Package 30
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277935-UJ3C120150K3S
Ultra Librarian 3D Model Ultra Librarian UJ3C120150K3S CAD Model

Description

The 1277935-UJ3C120150K3S is an N-Channel SiCFET (Cascode SiCJFET) transistor that is designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 1200 V
  • Continuous Drain Current (Id): 18.4A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 180mOhm @ 5A, 12V
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
  • Maximum Vgs: ±25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 166.7W (Tc)
  • Ideal Choice For: Transistors, FETs, MOSFETs - Single

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