The 8N70L-TF3-T is an N-channel enhancement mode power MOSFET from UTC (Unisonic Technologies Co., Ltd.). It is designed for high voltage, high-speed switching applications. This MOSFET utilizes advanced trench technology to provide excellent RDS(on) performance and low gate charge, contributing to efficient power conversion and reduced power losses.

Applications

• High-Efficiency Power Supplies
• DC-DC Converters
• Motor Control Circuits
• LED Lighting Systems
• Switching Regulators

Features

• Low RDS(on): Minimizes conduction losses and improves efficiency.
• Low Gate Charge: Reduces switching losses and improves high-frequency performance.
• High Avalanche Energy: Ensures robustness and reliability in demanding applications.
• Trench Technology: Provides superior performance and efficiency.
• Lead-Free and RoHS Compliant: Environmentally friendly.

Benefits

• Improved Efficiency: The low RDS(on) and gate charge contribute to higher overall system efficiency, reducing energy consumption and heat dissipation.
• Enhanced Reliability: The high avalanche energy rating and robust design ensure reliable operation in challenging environments.
• Simplified Design: The ease of use and predictable performance simplify the design process and reduce development time.
• Reduced System Cost: Improved efficiency and reliability can lead to lower overall system costs by reducing the need for heat sinks and other protective components.
• Environmentally Friendly: RoHS compliance ensures that the product meets environmental regulations.

Specifications (Typical)

• Drain-Source Voltage (VDS): 700V
• Gate-Source Voltage (VGS): ±30V
• Drain Current (ID): 8A
• RDS(on) (VGS=10V): Typically around 1.2 Ohms (Consult datasheet for specific value)
• Total Gate Charge (Qg): Typically around 10nC (Consult datasheet for specific value)
• Operating Temperature Range: -55°C to +150°C
• Package Type: TO-251/TO-252 (TF3 indicates a specific package variation)

Note: Always refer to the official datasheet from UTC for precise specifications and application guidelines.