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Same model may have multiple batches, images only for reference.
FA38SA50LC Real Image
Same model may have multiple batches, images only for reference.

FA38SA50LC

Part No FA38SA50LC
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 38A SOT-227
Datasheet
FA38SA50LC Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 420 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC
Base Product Number FA38
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 590544-FA38SA50LC
Ultra Librarian 3D Model Ultra Librarian FA38SA50LC CAD Model

Description

The FA38SA50LC is a N-channel MOSFET transistor from Vishay's HEXFET® series. It is designed for high-power applications and provides a drain-to-source voltage of 500V.

  • Channel Type: N-Channel
  • Series: HEXFET®
  • Drain-to-Source Voltage: 500V
  • Continuous Drain Current (@ 25°C): 38A
  • On-Resistance (Maximum): 130mΩ
  • Mounting: Chassis Mount
  • Gate Charge: 420nC
  • Input Capacitance: 6900pF
  • Operating Temperature: -55°C to 150°C

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