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Same model may have multiple batches, images only for reference.
IRC540PBF Vishay
Same model may have multiple batches, images only for reference.

IRC540PBF

Part No IRC540PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 28A TO-220-5
Datasheet
IRC540PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 77 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-5
Dimension TO-220-5
Win Source Part Number 1046377-IRC540PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRC540PBF CAD Model

Description

The Vishay MOSFET is a high-performance electronic component that is designed for current sensing.

  • Polarity: N-Channel
  • Drive Voltage: up to 10V
  • Power Dissipation (Max): 150W (Tc)
  • Package: TO-220-5
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 28A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 69nC @ 10V
  • Maximum Input Capacitance: 1300pF @ 25V
  • Maximum Rds On: 77 mOhm @ 17A, 10V

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