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Same model may have multiple batches, images only for reference.
IRCZ44PBF Vishay
Same model may have multiple batches, images only for reference.

IRCZ44PBF

Part No IRCZ44PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO-220-5
Datasheet
IRCZ44PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2500pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-5
Dimension TO-220-5
Win Source Part Number 1046388-IRCZ44PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRCZ44PBF CAD Model

Description

The Vishay MOSFET is a current sensing N-Channel FET designed for discrete semiconductor products.

  • Channel Type: N-Channel
  • Power Dissipation: 150W (Tc) (Max)
  • Mounting Type: Through Hole
  • Case/Package: TO-220-5
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate-Source Voltage: ±20V (Max)
  • Rds On: 28 mOhm @ 31A, 10V (Max)
  • Supply and Demand Status: Balanced

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