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Same model may have multiple batches, images only for reference.
IRF530PBF
Same model may have multiple batches, images only for reference.

IRF530PBF

Part No IRF530PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 14A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017434-IRF530PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF530PBF CAD Model

Description

This Vishay MOSFET is a high-quality component for various electronic devices.

  • Win Source Part Number: 017434-IRF530PBF
  • Polarity: N-channel
  • Power Dissipation: 88W (Tc)
  • Continuous Drain Current @ 25°C: 14A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 160 mOhm @ 8.4A, 10V
  • Status: Active
  • Popularity: High
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4245 $50.9400
255+ $0.3977 $101.4135
395+ $0.3842 $151.7590
560+ $0.3574 $200.1440
730+ $0.3439 $251.0470
910+ $0.3305 $300.7550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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