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Same model may have multiple batches, images only for reference.
IRF624STRL
Same model may have multiple batches, images only for reference.

IRF624STRL

Part No IRF624STRL
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 4.4A D2PAK
Datasheet
IRF624STRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 260pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 1.1 Ohm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 105611-IRF624STRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF624STRL CAD Model

Description

The electronic component with Id 166811 is an N-Channel MOSFET from Vishay.

  • Win Source Part Number: 105611-IRF624STRL
  • Package: D2PAK
  • Mounting: SMD (SMT) mountable
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 4.4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 260pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.6A, 10V
  • Supply and Demand Status: Balanced

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