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IRF720LPBF

Name: IRF720LPBF
Brand: Vishay
SKU: 461759
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF720LPBF
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 400V 3.3A TO-262
Datasheet	IRF720LPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	400V
Continuous Drain Current at 25°C	3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	20nC @ 10V
Max Input Capacitance	410pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.1W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs	1.8 Ohm @ 2A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-262-3
Dimension	TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number	1046584-IRF720LPBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF720LPBF CAD Model

Alternative Products

Description

The Vishay IRF720LPBF is an N-Channel MOSFET with a maximum power dissipation of 3.1W (Ta) and 50W (Tc).

Power Dissipation: 3.1W (Ta) and 50W (Tc)
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current @ 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 20nC @ 10V
Maximum Input Capacitance: 410pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On @ Id, Vgs: 1.8 Ohm @ 2A, 10V
Package: TO-262-3
Leads: Long leads, I2Pak, TO-262AA dimensions
Drive Voltage (Max Rds On, Min Rds On): 10V
Category: Discrete Semiconductor Products
Status: Active
Supply and Demand Status: Balance

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