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Same model may have multiple batches, images only for reference.
IRF730ALPBF Real Image
Same model may have multiple batches, images only for reference.

IRF730ALPBF

Part No IRF730ALPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 5.5A TO-262
Datasheet
IRF730ALPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046595-IRF730ALPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF730ALPBF CAD Model

Description

The Vishay IRF730ALPBF is an N-channel MOSFET with a drain-source breakdown voltage of 400V and a continuous drain current @ 25°C of 5.5A (Tc).

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 5.5A (Tc) @ 25°C
  • Maximum Power Dissipation: 74W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 600pF @ 25V
  • Maximum Rds On @ Id,Vgs: 1 Ohm @ 3.3A, 10V
  • Package: I2PAK
  • Mounting: Through-Hole
  • Applications: Discrete Semiconductor Products

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