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Same model may have multiple batches, images only for reference.
IRF730ASTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF730ASTRRPBF

Part No IRF730ASTRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET
Datasheet
IRF730ASTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 400V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 74W (Tc)
Rds On (Maximum) @ Id, Vgs 1 Ohm @ 3.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1187199-IRF730ASTRRPBF
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Family Name IRF730AS
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IRF730ASTRRPBF CAD Model

Description

The Vishay IRF730ASTRRPBF is a MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Vishay
  • Product Name: IRF730ASTRRPBF
  • Type: MOSFET transistor
  • Application: Discrete semiconductor products
  • Maximum Continuous Drain Current: 5.5A @ 25°C
  • Maximum Drain-Source Voltage: 400V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Power Dissipation: 74W @ Tc (case temperature)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 150°C
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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