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Same model may have multiple batches, images only for reference.
IRF9Z14PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9Z14PBF

Part No IRF9Z14PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 6.7A TO-220AB
Datasheet
IRF9Z14PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017566-IRF9Z14PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9Z14PBF CAD Model

Description

The Vishay P-channel MOSFET is a high-power transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 43W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 6.7A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V
  • Package: TO-220AB
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8203 $61.5225
175+ $0.6731 $117.7925
270+ $0.6521 $176.0670
370+ $0.6311 $233.5070
475+ $0.6100 $289.7500
635+ $0.5469 $347.2815
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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