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Same model may have multiple batches, images only for reference.
IRFBC30SPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC30SPBF

Part No IRFBC30SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.6A D2PAK / Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK
Datasheet
IRFBC30SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 660pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.1W (Ta), 74W (Tc)
Rds On (Maximum) @ Id, Vgs 2.2 Ohm @ 2.2A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777047-IRFBC30SPBF
Popularity Medium
Supply and Demand Status Balance
Family Name IRFBC30S
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFBC30SPBF CAD Model

Description

The Vishay Siliconix IRFBC30SPBF is a MOSFET transistor.

  • Continuous Drain Current: 3.6A @ 25 degrees Celsius
  • Maximum Power Dissipation: 3.1W (Ta) or 74W (Tc)
  • Channel Type: N
  • Drain Source Voltage: 600V
  • Gate Charge (Qg): 31nC @ 10V
  • Input Capacitance (Ciss): 660pF @ 25V
  • Operating Temperature Range: -55 degrees Celsius to 150 degrees Celsius (TJ)
  • Drive Voltage: 10V
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD
  • Alternative parts: STB2N62K3, STB3NB60, MTB3N60E, STB6NK60Z, and more
  • Introduction Date: March 27, 2007
  • Estimated EOL Date: 2027

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