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Same model may have multiple batches, images only for reference.
IRFBC30STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC30STRLPBF

Part No IRFBC30STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 600V 3.6A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205352-IRFBC30STRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFBC30S
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFBC30STRLPBF CAD Model

Description

The Vishay MOSFET is a high-performance component designed for use in a range of electronic devices.

  • Maximum Power Dissipation: 3.1W (Ta), 74W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Channel Type: N-channel
  • Mounting: SMD (SMT)
  • Drive Voltage: 10V
  • Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6818 $51.1350
180+ $0.5595 $100.7100
280+ $0.5420 $151.7600
385+ $0.5245 $201.9325
495+ $0.5070 $250.9650
660+ $0.4546 $300.0360
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Availability: 16,720 pieces
MOQ: 75 pcs
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