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Same model may have multiple batches, images only for reference.
IRFBF20SPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBF20SPBF

Part No IRFBF20SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1.7A D2PAK
Datasheet
IRFBF20SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 8 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017584-IRFBF20SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBF20SPBF CAD Model

Description

The Vishay 017584-IRFBF20SPBF is a N-channel MOSFET that has a maximum power dissipation of 3.1W (Ta) and 54W (Tc).

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 1.7A (Tc)
  • Mounting: surface mount device (SMD)
  • Package: D2PAK
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 8 Ohm @ 1A and 10V
  • Manufacturer: Vishay
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
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Availability: 7,500 pieces
MOQ: 60 pcs
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