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Same model may have multiple batches, images only for reference.
IRFD123PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD123PBF

Part No IRFD123PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.3A 4-DIP / Trans MOSFET N-CH 200V 1.3A 4-Pin HVMDIP
Datasheet
IRFD123PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 360pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.3W (Ta)
Rds On (Maximum) @ Id, Vgs 270 mOhm @ 780mA, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package 4-DIP, Hexdip, HVMDIP
Package 4-DIP (0.300", 7.62mm)
Win Source Part Number 777051-IRFD123PBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFD123
Introduction Date March 27, 2007
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFD123PBF CAD Model

Description

The Vishay Siliconix IRFD123PBF is an N-channel MOSFET.

  • Continuous Drain Current: 1.3A @ 25°C
  • Drain-Source Voltage: 100V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 16nC @ 10V
  • Input Capacitance: 360pF @ 25V
  • Maximum Power Dissipation: 1.3W @ Ta
  • Family: IRFD123
  • Package: 4-DIP
  • Popularity: Medium

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