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Same model may have multiple batches, images only for reference.
IRFD9120PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD9120PBF

Part No IRFD9120PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 1A 4-DIP
Datasheet
IRFD9120PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 390pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 600 mOhm @ 600mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 017593-IRFD9120PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFD9120
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFD9120PBF CAD Model

Description

The Vishay 017593-IRFD9120PBF is a P-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 1A (Ta) @ 25°C.

  • Manufacturer: Vishay
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id, Vgs: 600 mOhm @ 600mA, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 18nC @ 10V
  • Mounting Technology: through-hole
  • Package: 4-DIP (0.300”, 7.62mm)
  • Temperature Range: -55°C to 175°C (TJ)
  • Availability: actively available in the market with high popularity
  • Supply and Demand Status: balanced

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