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Same model may have multiple batches, images only for reference.
IRFD9123PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD9123PBF

Part No IRFD9123PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 1A HEXDIP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1A (Ta)
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 390pF @ 25V
Maximum Rds On at Id,Vgs 600 mOhm @ 600mA, 10V
Mounting Through Hole
Case / Package 4-HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 108603-IRFD9123PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD9123PBF CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay with part number 108603-IRFD9123PBF.

  • Packaging: tube/rail
  • Mounting: through hole
  • Technology: MOSFET
  • Polarity: P-Channel
  • Category: Discrete Semiconductor Products
  • Status: now obsolete (EOL)
  • Case/Package: 4-HVMDIP
  • Dimension: 4-DIP (0.300", 7.62mm)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 1A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 18nC @ 10V
  • Max Input Capacitance: 390pF @ 25V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 600mA, 10V
  • Supply and Demand Status: balanced

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