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Same model may have multiple batches, images only for reference.
IRFI830GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI830GPBF

Part No IRFI830GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3.1A TO220FP
Datasheet
IRFI830GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 610pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 017609-IRFI830GPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI830GPBF CAD Model

Description

The Vishay IRFI830GPBF is an N-Channel MOSFET that is used in discrete semiconductor products.

  • Power Dissipation: 35W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 3.1A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.9A, 10V
  • Mounting: through hole
  • Packaging: tube/rail
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4090 $51.1250
300+ $0.3356 $100.6800
465+ $0.3252 $151.2180
640+ $0.3147 $201.4080
825+ $0.3042 $250.9650
1,105+ $0.2727 $301.3335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,550 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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