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Same model may have multiple batches, images only for reference.
IRFIB5N50LPBF Vishay
Same model may have multiple batches, images only for reference.

IRFIB5N50LPBF

Part No IRFIB5N50LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4.7A TO220FP
Datasheet
IRFIB5N50LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 160467-IRFIB5N50LPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIB5N50LPBF CAD Model

Description

The Vishay IRFIB5N50LPBF MOSFET is a high-performance component that is suitable for use in a wide range of applications.

  • Polarity: N-channel
  • Power Dissipation: 42W (Tc)
  • Drive Voltage: 10V
  • Case/Package: TO-220-3 full pack, isolated tab
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 4.7A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 45nC @ 10V
  • Maximum Rds On: 800 mOhm @ 2.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8954 $66.3390
75+ $1.5546 $116.5950
120+ $1.5061 $180.7320
160+ $1.4576 $233.2160
205+ $1.4091 $288.8655
275+ $1.2636 $347.4900
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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