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Same model may have multiple batches, images only for reference.
IRFIB7N50L Real Image
Same model may have multiple batches, images only for reference.

IRFIB7N50L

Part No IRFIB7N50L
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6.8A TO220FP
Datasheet
IRFIB7N50L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 2220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 160471-IRFIB7N50L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIB7N50L CAD Model

Description

The Vishay MOSFET (Model Number IRFIB7N50L) is a N-Channel power MOSFET designed for use in discrete semiconductor products.

  • Package: TO-220-3 with an isolated tab
  • Maximum Power Dissipation: 46W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 6.8A (Tc) @ 25°C
  • Maximum Rds On: 380 mOhm @ 4.1A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 92nC @ 10V
  • Maximum Input Capacitance: 2220pF @ 25V
  • Maximum Gate-Source Voltage: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9727 $59.1810
75+ $1.6193 $121.4475
115+ $1.5685 $180.3775
155+ $1.5177 $235.2435
200+ $1.4669 $293.3800
265+ $1.3155 $348.6075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,850 pieces
MOQ: 30 pcs
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