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Same model may have multiple batches, images only for reference.
IRFP31N50LPBF Real Image
Same model may have multiple batches, images only for reference.

IRFP31N50LPBF

Part No IRFP31N50LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 31A TO-247AC
Datasheet
IRFP31N50LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 5000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 460W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 205376-IRFP31N50LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP31N50LPBF CAD Model

Description

The Vishay 205376-IRFP31N50LPBF N-Channel MOSFET is a high-performance discrete semiconductor product that is designed to operate in a wide temperature range from -55°C to 150°C.

  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation: 460W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 31A (Tc)
  • Maximum Rds On: 180 mOhm @ 19A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 210nC @ 10V
  • Package: TO-247-3
  • Mounting: Through hole

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132+ $2.6311 $347.3052
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