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IRFPC50APBF

Part No IRFPC50APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 600V 11A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 580 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 017643-IRFPC50APBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFPC50
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFPC50APBF CAD Model

Description

The Vishay IRFPC50APBF MOSFET is a powerful N-Channel device that offers a maximum power dissipation of 180W (Tc).

  • Maximum Power Dissipation: 180W (Tc)
  • Mounting: Through-hole
  • Package: TO-247-3
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 70nC @ 10V
  • Maximum Input Capacitance: 2100pF @ 25V
  • Maximum Rds On at Id,Vgs: 580 mOhm @ 6A, 10V
  • Compliance: Halogen-free compliant
  • Popularity: high demand-supply balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,100 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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