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Same model may have multiple batches, images only for reference.
IRFR020TRR Real Image
Same model may have multiple batches, images only for reference.

IRFR020TRR

Part No IRFR020TRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 14A DPAK
Datasheet
IRFR020TRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047008-IRFR020TRR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR020TRR CAD Model

Description

The Vishay 435233 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2.5W (Ta) or 42W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 100 mOhm @ 8.4A, 10V
  • Package: D-Pak TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD (SMT) technology
  • Applications: automotive, computers and computer peripherals, communications and networking, consumer electronics, lighting, and sensing and instrumentation

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