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Same model may have multiple batches, images only for reference.
IRFR9310TRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9310TRRPBF

Part No IRFR9310TRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET
Datasheet
IRFR9310TRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 400V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 270pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 50W (Tc)
Rds On (Maximum) @ Id, Vgs 7 Ohm @ 1.1A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D-Pak
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1187982-IRFR9310TRRPBF
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Family Name IRFR9310
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFR9310TRRPBF CAD Model

Description

The Vishay IRFR9310TRRPBF is a P-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 50W
  • Drain-Source Voltage: 400V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 270pF @ 25V
  • Channel Type: P
  • Rds On: 7 Ohm @ 1.1A and 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Technology: SMD
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Estimated EOL Date: 2024

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