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Same model may have multiple batches, images only for reference.
IRFSL9N60APBF Real Image
Same model may have multiple batches, images only for reference.

IRFSL9N60APBF

Part No IRFSL9N60APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9.2A TO-262
Datasheet
IRFSL9N60APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 017719-IRFSL9N60APBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFSL9N60APBF CAD Model

Description

The Vishay 017719-IRFSL9N60APBF MOSFET is a N-channel power transistor with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 9.2A at 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 9.2A @ 25°C
  • Power Dissipation: 170W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 750 mOhm @ 5.5A, 10V
  • Applications: Power supplies, motor control, and lighting systems
  • Package: I2PAK
  • Dimensions: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Packaging: Tube/rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3543 $58.8575
60+ $1.9318 $115.9080
93+ $1.8713 $174.0309
128+ $1.8110 $231.8080
165+ $1.7507 $288.8655
221+ $1.5696 $346.8816
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Availability: 9,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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