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Same model may have multiple batches, images only for reference.
IRL620PBF Real Image
Same model may have multiple batches, images only for reference.

IRL620PBF

Part No IRL620PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 5.2A TO-220AB
Datasheet
IRL620PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 16nC @ 5V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 3.1A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047515-IRL620PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL620PBF CAD Model

Description

The Vishay IRL620PBF is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 50W (Tc)
  • Drive Voltage: 4V, 5V
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 5.2A (Tc)
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 5V
  • Package: TO-220AB
  • Dimensions: TO-220-3
  • Supply and Demand Status: balanced
  • Package Quantity: 50

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