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Same model may have multiple batches, images only for reference.
IRL630SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL630SPBF

Part No IRL630SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 5.4A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205472-IRL630SPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRL630SPBF CAD Model

Description

The Vishay IRL630SPBF MOSFET is a high-quality, N-channel MOSFET that is ideal for use in various electronic applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9A @ 25°C
  • Maximum Rds On: 400 mOhm @ 5.4A and 5V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Package: D2PAK
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2323 $61.6150
115+ $1.0112 $116.2880
180+ $0.9796 $176.3280
245+ $0.9479 $232.2355
320+ $0.9164 $293.2480
425+ $0.8216 $349.1800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,270 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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