The Vishay Siliconix IRL640SPBF is a N-Channel MOSFET used for discrete semiconductor products.

• Drain-Source Breakdown Voltage: It has a drain-source breakdown voltage of 200V and a continuous drain current of 17A.
• Gate-Source Voltage: The maximum gate-source voltage is ±10V and the input capacitance is 1800pF @ 25V.
• Power Dissipation: This MOSFET has a maximum power dissipation of 3.1W and 125W.
• Package: It comes in a D2PAK (2 Leads + Tab), TO-263-3, TO-263AB package and has a limited supply and demand status.
• Drive Voltage: The drive voltage is 4V and 5V and the gate-source voltage(th) (Maximum) @ Id is 2V @ 250μA.
• Gate Charge (Qg): The gate charge (Qg) (Maximum) @ Vgs is 66nC @ 5V.
• Suitability: This MOSFET is suitable for use in a variety of applications.