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Same model may have multiple batches, images only for reference.
IRLI530GPBF Real Image
Same model may have multiple batches, images only for reference.

IRLI530GPBF

Part No IRLI530GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.7A TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 28nC @ 5V
Max Input Capacitance 930pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 5.8A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 140787-IRLI530GPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRLI530GPBF CAD Model

Description

This Vishay MOSFET is a discrete semiconductor product that comes in a TO-220-3 package with an isolated tab.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.7A @ 25°C
  • Gate-Source Threshold Voltage: 2V
  • Maximum Gate Charge: 28nC @ 5V
  • Supply and Demand Status: Limited
  • Packaging: 1k pcs

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