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IRLL110TRPBF-BE3

Part No IRLL110TRPBF-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.5A SOT223  /  N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 540mOhm @ 900mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Base Product Number IRLL110
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-IRLL110TRPBF-BE3TR,742-IRLL110TRPBF-BE3CT,742-IRLL110TRPBF-BE3DKR
Standard Package 2,500
Win Source Part Number 1129981-IRLL110TRPBF-BE3
Ultra Librarian 3D Model Ultra Librarian IRLL110TRPBF-BE3 CAD Model

Description

The IRLL110TRPBF-BE3 is a high-performance N-channel MOSFET designed for use in a variety of electronic circuits.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 1.5A (Tc) @ 25°C
  • Rds On: 540mOhm @ 900mA, 5V
  • Temperature Range: -55°C to 150°C (TJ)
  • RoHS Compliant: yes
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3784 $51.0840
325+ $0.3105 $100.9125
500+ $0.3008 $150.4000
690+ $0.2911 $200.8590
890+ $0.2814 $250.4460
1,190+ $0.2523 $300.2370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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