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IRLR110PBF

Part No IRLR110PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.3A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.1nC @ 5V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 540 mOhm @ 2.6A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047580-IRLR110PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRLR110PBF CAD Model

Description

The IRLR110PBF is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 4.3A @ 25°C.

  • Manufacturer: Vishay
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 4.3A @ 25°C
  • Power Dissipation: 2.5W (Ta) or 25W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Rds On: 540 mOhm @ 2.6A and 5V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Input Capacitance: 250pF @ 25V
  • Package: D-Pak (TO-252-3)
  • Leads and Tab: Two leads and a tab (SC-63)
  • Availability: Tube/rail
  • Application: Discrete semiconductor products
  • Popularity: Medium

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