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Same model may have multiple batches, images only for reference.
IRLZ34STRR Real Image
Same model may have multiple batches, images only for reference.

IRLZ34STRR

Part No IRLZ34STRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A D2PAK
Datasheet
IRLZ34STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 18A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047707-IRLZ34STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ34STRR CAD Model

Description

The Vishay IRFZ34STRR is an N-channel MOSFET that is designed for use in a wide range of applications.

  • Package: D2PAK
  • Maximum Power Dissipation: 3.7W (Ta) and 88W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 30A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 35nC @ 5V
  • Maximum Input Capacitance: 1600pF @ 25V
  • Maximum Gate-Source Voltage: ±10V
  • Popularity: medium popularity
  • Supply and Demand Status: balanced

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