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SI1021R-T1-E3

Part No SI1021R-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 190MA SC-75A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 1.7nC @ 15V
Max Input Capacitance 23pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250mW (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75A
Win Source Part Number 104338-SI1021R-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1021R-T1-E3 CAD Model

Description

The Vishay 104338-SI1021R-T1-E3 is a P-channel MOSFET with a maximum power dissipation of 250mW (Ta).

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 190mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 1.7nC @ 15V
  • Maximum Input Capacitance: 23pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4 Ohm @ 500mA, 10V
  • Package: SC-75A
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.2056 $58.5960
685+ $0.1688 $115.6280
1,065+ $0.1635 $174.1275
1,460+ $0.1582 $230.9720
1,890+ $0.1529 $288.9810
2,530+ $0.1371 $346.8630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,890 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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