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Same model may have multiple batches, images only for reference.
SI1022R-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1022R-T1-GE3

Part No SI1022R-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 330MA SC-75A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 30pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250mW (Ta)
Maximum Rds On at Id,Vgs 1.25 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75A
Win Source Part Number 028329-SI1022R-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI1022R-T1-GE3 CAD Model

Description

The Vishay SI1022R-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 330mA @ 25°C.

  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 0.6nC @ 4.5V
  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Suitable for: Discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Balanced
  • Applications: Industrial, power management, and portable devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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