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Same model may have multiple batches, images only for reference.
SI1067X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1067X-T1-GE3

Part No SI1067X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.06A SC89-6
Datasheet
SI1067X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 9.3nC @ 5V
Max Input Capacitance 375pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.06A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 064376-SI1067X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1067X-T1-GE3 CAD Model

Description

The Vishay SI1067X-T1-GE3 is a MOSFET electronic component with a maximum power dissipation of 236mW (Ta).

  • Manufacturer: Vishay
  • Product Name: SI1067X-T1-GE3
  • Maximum Power Dissipation: 236mW (Ta)
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 150 mOhm @ 1.06A, 4.5V
  • Case/Package: SC-89-6
  • Dimensions: SOT-563 and SOT-666

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Pricing & Ordering

Quantity Unit Price Ext. Price
460+ $0.1259 $57.9140
1,125+ $0.1028 $115.6500
1,725+ $0.1005 $173.3625
2,385+ $0.0970 $231.3450
3,090+ $0.0936 $289.2240
4,110+ $0.0843 $346.4730
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Availability: 6,000 pieces
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