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SI1300BDL-T1-GE3

Part No SI1300BDL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 400MA SC-70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.84nC @ 4.5V
Max Input Capacitance 35pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 190mW (Ta), 200mW (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 250mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 1095678-SI1300BDL-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1300BDL-T1-GE3 CAD Model

Description

The SI1300BDL-T1-GE3 is an N-channel MOSFET manufactured by Vishay.

  • Mounting: Surface Mount
  • Maximum Power Dissipation: 190mW (Ta), 200mW (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 400mA (Tc)
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On: 850 mOhm @ 250mA, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1857 $58.4955
760+ $0.1525 $115.9000
1,175+ $0.1478 $173.6650
1,620+ $0.1429 $231.4980
2,095+ $0.1381 $289.3195
2,800+ $0.1238 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 119,837 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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