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Same model may have multiple batches, images only for reference.
SI1305EDL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1305EDL-T1-GE3

Part No SI1305EDL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 0.86A SOT323-3
Datasheet
SI1305EDL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 280 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 064379-SI1305EDL-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1305EDL-T1-GE3 CAD Model

Description

The Vishay SI1305EDL-T1-GE3 is a MOSFET designed for use in various electronic applications.

  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Power Dissipation: 290mW
  • Drain-Source Breakdown Voltage: 8V
  • Applications: power management, safety, signal processing, and automotive applications
  • Case/Package: SC-70-3

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