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Same model may have multiple batches, images only for reference.
SI1441EDH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1441EDH-T1-GE3

Part No SI1441EDH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4A SOT-363
Datasheet
SI1441EDH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Supply and Demand Status Limited
Popularity Medium
Win Source Part Number 1095692-SI1441EDH-T1-GE3
Dimension 6-TSSOP, SC-88, SOT-363
Case / Package SOT-363
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 41 mOhm @ 5A, 4.5V
Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc)
Maximum Gate-Source Voltage ±10V
Max Gate Charge 33nC @ 8V
Gate-Source Threshold Voltage 1V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Continuous Drain Current at 25°C 4A (Tc)
Drain-Source Breakdown Voltage 20V
Technology MOSFET
Polarity P-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
Ultra Librarian 3D Model Ultra Librarian SI1441EDH-T1-GE3 CAD Model

Description

The Vishay MOSFET is a discrete semiconductor product that is ideal for various applications.

  • Channel Type: P-Channel
  • Power Dissipation: 1.6W (Ta), 2.8W (Tc)
  • Drive Voltage: 1.8V, 4.5V (Max Rds On, Min Rds On)
  • Continuous Drain Current @ 25°C: 4A (Tc)
  • Package/Case: SOT-363
  • Dimension: 6-TSSOP, SC-88, SOT-363
  • Maximum Rds On @ Id, Vgs: 41 mOhm @ 5A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5075 $58.3625
280+ $0.4165 $116.6200
430+ $0.4035 $173.5050
595+ $0.3904 $232.2880
765+ $0.3775 $288.7875
1,025+ $0.3384 $346.8600
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Availability: 23,000 pieces
MOQ: 115 pcs
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