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Same model may have multiple batches, images only for reference.
SI1467DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1467DH-T1-GE3

Part No SI1467DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A SC-70-6
Datasheet
SI1467DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13.5nC @ 4.5V
Max Input Capacitance 561pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta), 2.78W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 028347-SI1467DH-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number SI1405BDH-T1-E3;  

Description

The Vishay's SI1467DH-T1-GE3 is a P-channel MOSFET that has a power dissipation of 1.5W (Ta), 2.78W (Tc). It is designed to be used in discrete semiconductor products and has a drive voltage of 1.8V, 4.5V. The component comes in an SC-70-6 (SOT-363) package and can be mounted on a surface. The supply and demand status for this component is limited.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
155+ $0.3286 $50.9330
375+ $0.2697 $101.1375
575+ $0.2612 $150.1900
795+ $0.2528 $200.9760
1,025+ $0.2444 $250.5100
1,370+ $0.2191 $300.1670
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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