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SI1467DH-T1-GE3

Part No SI1467DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A SC-70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13.5nC @ 4.5V
Max Input Capacitance 561pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta), 2.78W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 028347-SI1467DH-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1467DH-T1-GE3 CAD Model

Description

The Vishay's SI1467DH-T1-GE3 is a P-channel MOSFET that has a power dissipation of 1.5W (Ta), 2.78W (Tc).

  • Category: discrete semiconductor products
  • Drive Voltage: 1.8V, 4.5V
  • Package: SC-70-6 (SOT-363)
  • Mounting: surface
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2552 $51.0400
480+ $0.2094 $100.5120
740+ $0.2029 $150.1460
1,020+ $0.1964 $200.3280
1,320+ $0.1898 $250.5360
1,765+ $0.1702 $300.4030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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